vs-12cwq04fnhm3 www.vishay.com vishay semiconductors revision: 21-aug-13 1 document number: 94736 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 6 a features ? low forward voltage drop ? guard ring for enha nced ruggedness and long term reliability ? popular d-pak outline ? center tap configuration ? small foot print, surface mountable ? high frequency operation ? aec-q101 qualified ? meets jesd 201 class 2 whisker test ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the vs-12cwq04fnhm3 surface mount, center tap, schottky rectifier series has be en designed for applications requiring low forward drop and small foot prints on pc board. typical applications ar e in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary package d-pak (to-252aa) i f(av) 2 x 6 a v r 40 v v f at i f 0.48 v i rm 40 ma at 125 c t j max. 150 c diode variation common cathode e as 9 mj base common cathode common cathode 2 4 13 anode anode d-pak (to-252aa) major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 12 a v rrm 40 v i fsm t p = 5 s sine 550 a v f 6 a pk , t j = 125 c (per leg) 0.48 v t j range - 55 to 150 c voltage ratings parameter symbol vs-12cwq04fnhm3 units maximum dc reverse voltage v r 40 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average ? forward current ? see fig. 5 per leg i f(av) 50 % duty cycle at t c = 134 c, rectan gular waveform 6 a per device 12 maximum peak one cycle ? non-repetitive surge current ? see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 550 a 10 ms sine or 6 ms rect. pulse 90 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 1.5 a, l = 8 mh 9 mj repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 1.2 a
vs-12cwq04fnhm3 www.vishay.com vishay semiconductors revision: 21-aug-13 2 document number: 94736 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % note (1) thermal runaway condition fo r a diode on its own heatsink electrical specifications parameter symbol test conditions values units maximum forward ? voltage drop per leg ? see fig. 1 v fm (1) 6 a t j = 25 c 0.53 v 12 a 0.68 6 a t j = 125 c 0.48 12 a 0.64 maximum reverse ? leakage current per leg ? see fig. 2 i rm (1) t j = 25 c v r = rated v r 3 ma t j = 125 c 40 threshold voltage v f(to) t j = t j maximum 0.28 v forward slope resistance r t 25.58 m ? typical junction ca pacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 405 pf typical series inductance per leg l s measured lead to lead 5 mm from package body 5.0 nh thermal - mechanical specifications parameter symbol test conditions values units maximum junction and srorage ? temperature range t j (1) , t stg - 55 to 150 c maximum thermal resistance, ? junction to case per leg r thjc dc operation ? see fig. 4 3.0 c/w per device 1.5 approximate weight 0.3 g 0.01 oz. marking device case style d-pak 12cwq04fnh dp tot dt j ------------- 1 r thja -------------- <
vs-12cwq04fnhm3 www.vishay.com vishay semiconductors revision: 21-aug-13 3 document number: 94736 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 1 10 100 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0.8 1.2 2.2 1.4 1.0 0.6 0.2 t j = 150 c t j = 125 c t j = 25 c 0 1.6 1.8 2.0 i r - reverse current (ma) v r - reverse voltage (v) 0 102030 0.001 0.1 1 10 100 540 0.01 35 25 15 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 02030 40 45 100 1000 10 t j = 25 c 515 25 35 z thjc - thermal impedance (c/w) 0.01 0.1 1 10 t 1 - rectangular pulse duration (s) 0.00001 0.0001 0.001 0.01 0.1 1 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-12cwq04fnhm3 www.vishay.com vishay semiconductors revision: 21-aug-13 4 document number: 94736 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - maximum non-repeti tive surge current (per leg) note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r allowable case temperature (c) i f(av) - average forward current (a) 089 4 115 125 130 140 150 155 26 dc see note (1) square wave (d = 0.50) 80 % rated v r applied 1357 120 135 145 0 average power loss (w) i f(av) - average forward current (a) 0 46 9 1 2 3 4 5 2 8 rms limit dc d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 13 57 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 100 1000 10 000 at any rated load condition and with rated v applied following surge rrm 10
vs-12cwq04fnhm3 www.vishay.com vishay semiconductors revision: 21-aug-13 5 document number: 94736 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-12cwq04fnhm3 75 3000 antistatic plastic tube vs-12cwq04fntrhm3 2000 2000 13" diameter reel vs-12cwq04fntrrhm3 3000 3000 13" diameter reel vs-12cwq04fntrlhm3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95519 part marking information www.vishay.com/doc?95518 packaging information www.vishay.com/doc?95033 2 - current rating (12 a) 3 - center tap configuration - 4 4 - package identifier: w = d-pak 5 - schottky ?q? series 6 - voltage rating (04 = 40 v) 7 - fn = to-252aa 8 - none = tube tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 8 9 vs- 12 c w q 04 fn trl h m3 10 - environmental digit: m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free 10 9 - h = aec-q101 qualified
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